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PTFA041501HL

Infineon
Part Number PTFA041501HL
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Aug 6, 2013
Detailed Description PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W...
Datasheet PDF File PTFA041501HL PDF File

PTFA041501HL
PTFA041501HL

Overview
PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.
They are available in thermally-enhanced plastic open-cavity packages with copper flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA041501GL Package PG-63248-2 PTFA041501HL Package PG-64248-2 Single-carrier CDMA IS-95 Performance VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz Features • 45 Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS compliant Broadband internal matching Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% Typical CW performance, 470 MHz, 28 V - Output power at P–1dB = 175 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power Adjacent Channel Power Ratio (dB) -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 36 38 40 42 44 46 48 • • Drain Efficiency (%) –15°C 25°C 90°C Efficiency 40 35 30 25 20 • ACPR ALT 15 10 5 0 • • • • Average Output Power (dBm) RF Characteristics Single-carrier CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, ƒ = 470 MHz Characteristic Gain Drain Efficiency Adjacent Channel Power Ratio Symbol Gps Min — — — Typ 21 41 –33 Max — — — Unit dB % dB ηD ACPR All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 *See Infineon distributor for future availability.
Rev.
02, 2008-11-21 Free Datasheet http://www.
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