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PTFA043002E

Part Number	PTFA043002E
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FETs
Published	Aug 6, 2013
Detailed Description	PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, i...
Datasheet	PTFA043002E PDF File

Overview

PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS ® push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz.
The thermally-enhanced package provides the coolest operation available.
Full gold metallization ensures excellent device lifetime and reliability.
PTFA043002E Package H-30275-4 Features Two-tone Drive-up at 800 MHz (in broadband circuit) VDD = 32 V, IDQ = 1.
55 A, 0 -10 -20 • • 45 40 Thermally-enhanced package Broadband internal matching Typical 8VSB performance - Average output power = 100 W - Gain = 16 dB ...

Similar Datasheet

PTFA043002E Thermally-Enhanced High Power RF LDMOS FETs - Infineon

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