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PTFA092201F

Infineon
Part Number PTFA092201F
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Aug 6, 2013
Detailed Description PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and...
Datasheet PDF File PTFA092201F PDF File

PTFA092201F
PTFA092201F

Overview
PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA092201E Package H-36260-2 PTFA092201F Package H-37260-2 2-Carrier WCDMA Performance VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, P/A R = 8.
1 dB, 10 MHz carrier spacing, 3.
84 MHz bandwidth 60 50 -30 Features • • • IMD (dBc), ACPR (dBc) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband i...


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