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SIS443DN

Part Number	SIS443DN
Manufacturer	Vishay
Description	P-Channel MOSFET
Published	Aug 8, 2013
Detailed Description	SiS443DN Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. 0.0117 at ...
Datasheet	SIS443DN PDF File

Overview

SiS443DN Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max.
0.
0117 at VGS = - 10 V 0.
0160 at VGS = - 4.
5 V ID (A) - 35d - 35d Qg (Typ.
) 41.
5 nC • TrenchFET® Power MOSFET • 100% Rg and UIS Tested • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 PowerPAK® 1212-8 APPLICATIONS • Notebook Computers and Mobile S 3.
30 mm S 1 2 3 S S 3.
30 mm G 4 D 8 7 6 5 D D D Computing - Adaptor Switch - Load Switch - DC/DC Converter - Power Management G Bottom View D P-Channel MOSFET Ordering Information: SiS443DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 40 ± 20 - 35d - 35d - 13.
3a, b - 10.
6a, b - 80 - 35d - 3a, b - 20 20 52 33 3.
7a, b 2.
4a, b - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Case t 10 s Steady State Symbol RthJA RthJC Typical 26 1.
9 Maximum 33 2.
4 Unit °C/W Notes: a.
Surface mounted on 1" x 1" FR4 board.
b.
t = 10 s.
c.
Maximum under steady state conditions is 81 °C/W.
d.
Package limited.
e.
See solder profile (www.
vishay.
com/doc?73257).
The PowerPAK 1212-8 is a leadless package.
The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.
A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter...

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SIS443DN P-Channel MOSFET - Vishay

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