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FDS89161LZ

Fairchild Semiconductor
Part Number FDS89161LZ
Manufacturer Fairchild Semiconductor
Description Dual N-Channel MOSFET
Published Aug 8, 2013
Detailed Description FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161LZ Dual N-Channel Shielded Gate Pow...
Datasheet PDF File FDS89161LZ PDF File

FDS89161LZ
FDS89161LZ

Overview
FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.
7 A, 105 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.
7 A „ Max rDS(on) = 160 mΩ at VGS = 4.
5 V, ID = 2.
1 A „ High performance trench technology for extremely low rDS(on) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resisitance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
„ High power and current handling capability in a widely used surface mount package „ CDM ESD protection level > 2KV typical (Note 4) Application „ DC-DC conversion „ 100% UIL Tested „ RoHS Compliant D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 SO-8 D2 5 D2 6 Q2 D1 7 D1 8 Q1 4 G2 3 S2 2 G1 1 S...


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