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SSG9435P

SeCoS
Part Number SSG9435P
Manufacturer SeCoS
Description P-Channel MOSFET
Published Aug 9, 2013
Detailed Description Elektronische Bauelemente SSG9435P -5A, -30V, RDS(ON) 48 mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product ...
Datasheet PDF File SSG9435P PDF File

SSG9435P
SSG9435P

Overview
Elektronische Bauelemente SSG9435P -5A, -30V, RDS(ON) 48 mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG9435P is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSG9435P meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available PACKAGE INFORMATION Package MPQ SOP-8 2.
5K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF.
A B C D E F G Millimeter Min.
Max.
5.
79 6.
20 4.
70 5.
11 3.
80 4.
00 0° 8° 0.
40 1.
27 0.
10 0.
25 1.
27 TYP.
REF.
H J K L M N Millimeter Min.
Max.
0.
33 0.
51 0.
375 REF.
45°REF.
1.
3 1.
752 0 0.
25 0.
25 REF.
S D S D S D G D MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 @VGS=10V Pulsed Drain Current 3 TA =25°C ID TA =70°C IDM Total Power Dissipation TA =25°C PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Maximum Thermal Resistance from Junction to Ambient 1 RθJA Maximum Thermal Resistance from Junction to Ambient 2 RθJA Maximum Thermal Resistance from Junction to Case 1 RθJC Rating -30 ±20 -5 -4 -25 2.
5 -55 ~ 150 t≦10sec , 50 Steady State , 83 125 25 Unit V V A A A W °C °C / W http://www.
SeCoSGmbH.
com/ 10-Jul-2017 Rev.
E Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SSG9435P -5A, -30V, RDS(ON) 48 mΩ P-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage BVDSS -30 - - Gate-Threshold Voltage VGS(th) -1 -1.
5 -2 Forward Transfer conductance gfs - 11 -...


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