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SSG9575

SeCoS
Part Number SSG9575
Manufacturer SeCoS
Description P-Channel MOSFET
Published Aug 9, 2013
Detailed Description SSG9575 -4A, -60V,RDS(ON) 90m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Produ...
Datasheet PDF File SSG9575 PDF File

SSG9575
SSG9575

Overview
SSG9575 -4A, -60V,RDS(ON) 90m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product SOP-8 Description The SSG9575 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.
35 0.
49 1.
27Typ.
4.
80 5.
00 0.
100.
25 3.
80 4.
00 6.
20 5.
80 0.
25 0.
40 0.
90 0.
19 0.
25 45 o 0.
375 REF Features * Low on-resistance * Simple drive requirement D 8 D 7 D 6 D 5 0 o 8 o 1.
35 1.
75 Dimensions in millimeters D * Fast switching characteristic 9575SC Date Code G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -60 ±25 -4 -3.
2 -20 3 0.
02 Unit V V A A A W W / oC o 3 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient Max.
Symbol Rthj-a Ratings 50 o Unit C /W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Free Datasheet http://www.
datasheet4u.
com/ Page 1 of 4 SSG9575 Elektronische Bauelemente -6A, -60V,RDS(ON) 90m£[ P-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min.
-60 _ Typ.
_ Max.
_ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C,ID=-1mA VDS=VGS, ID...


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