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IXTP26P20P

IXYS
Part Number IXTP26P20P
Manufacturer IXYS
Description Power MOSFET
Published Aug 9, 2013
Detailed Description PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P TO-263 A...
Datasheet PDF File IXTP26P20P PDF File

IXTP26P20P
IXTP26P20P

Overview
PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 = ≤ RDS(on) - 200V - 26A 170mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight G S D (Tab) G DS D (Tab) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient - 200 V - 200 V ±20 V ±30 V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C - 26 A - 70 A - 26 A 1.
5 J IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 10 300 - 55 .
.
.
+150 150 - 55 .
.
.
+150 V/ns W °C °C °C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s 300 °C 260 °C Mounting Torque (TO-3P,TO-220 &TO-247) 1.
13/10 Nm/lb.
in.
TO-263 TO-220 TO-3P TO-247 2.
5 g 3.
0 g 5.
5 g 6.
0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
- 200 V - 2.
0 - 4.
0 V ±100 nA - 10 μA -150 μA 170 mΩ G D S TO-247 (IXTH) D (Tab) G D S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features z International Standard Packages z Avalanche Rated z Rugged PolarPTM Process z Low Package Inductance z Fast Intrinsic Diode Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switches z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators © 2013 IXYS CORPORATION, All Rights Reserved DS99913D(01/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = -10V, ID = 0.
5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = -25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 3.
3Ω (External) Qg(on) Qgs Qgd VGS = -10V, VDS = 0.
5 • VDSS, ID = 0.
...


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