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2SA1255

Part Number	2SA1255
Manufacturer	Toshiba Semiconductor
Description	SILICON PNP TRIPLE DIFFUSED TRANSISTOR
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 2SA1255 High Voltage Switching Applications Unit...
Datasheet	2SA1255 PDF File

Overview

TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 2SA1255 High Voltage Switching Applications Unit: mm • High voltage: VCBO = −200 V (min) VCEO = −200 V (min) • Small package • Complementary to 2SC3138 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −200 −200 −5 −50 −20 150 125 −55~125 V V V mA mA mW °C °C JEDEC JEITA TO-236MOD SC-59 Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-3F1A temper...

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