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2SA1296

Part Number	2SA1296
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Power Switching Applica...
Datasheet	2SA1296 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Power Switching Applications 2SA1296 Unit: mm • Low saturation voltage: VCE (sat) = −0.
5 V (max) @IC = −2 A • Complementary to 2SC3266.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −6 V Collector current IC −2 A Base current IB −0.
5 A Collector power dissipation Junction temperature Storage temperature range PC 750 mW Tj 150 °C Tstg −55~150 °C JEDEC JEITA TO-92 SC-43 Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA ...

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