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2SA1313

Part Number	2SA1313
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Dri...
Datasheet	2SA1313 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SA1313 Unit: mm • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • High voltage: VCEO = −50 V (min) • Complementary to 2SC3325 • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −50 −50 −5 −500 −50 200 150 −55 to 150 V V V mA mA mW °C °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliabili...

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