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2SA1316

Part Number	2SA1316
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Recom...
Datasheet	2SA1316 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers 2SA1316 Unit: mm · Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.
6 nV/Hz1/2 (typ.
) · Low pulse noise.
Low 1/f noise · Low base spreading resistance: rbb’ = 2.
0 Ω (typ.
) · Complementary to 2SC3329 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -80 -80 -...

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