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2SA1391

Sanyo Semicon Device
Part Number 2SA1391
Manufacturer Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Published Mar 22, 2005
Detailed Description Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Application...
Datasheet PDF File 2SA1391 PDF File

2SA1391
2SA1391

Overview
Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features · Hgih breakdown voltage.
· Excellent hFE linearity.
· Wide ASO and highly resistant to breakdown.
· Adoption of MBIT process.
Switching Test Circuit Package Dimensions unit:mm 2003A [2SA1319/2SC3332] ( ) : 2SA1319 (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) Specifications JEDEC : TO-92 EIAJ : SC-43 SANYO : NP B : Base C : Collector E : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)180 (–)160 (–)6 (–)0.
7 (–)1.
5 700 150 –55 to +150 Unit V V V A A mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Common Base Output Capacitance Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA VCB=(–)10V IC=(–)250mA, IB=(–)25mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg IC=(–)250mA, IB=(–)25mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 See specified Test Circuit See specified Test Circuit Fall Time tf See specified Test Circuit * : The 2SA1319/2SC3332 are classified by 100mA hFE as follows : 100 R 200 140 S 280 200 T 400 Ratings min typ 100* 80 120 (11)8 (0.
20) 0.
12 (–)0.
85 (–)180 (–)160 (–)6 (60)50 (900) 1000 (60)60 max (–)0.
1 (–)0.
1 400* (0.
5) 0.
4 (–)1.
2 Unit µA µA MHz pF V V V V V ns ns ns SANYO Electric Co.
,Ltd.
Semiconductor...


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