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C3112

Toshiba Semiconductor
Part Number C3112
Manufacturer Toshiba Semiconductor
Description 2SC3112
Published Aug 14, 2013
Detailed Description 2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applicati...
Datasheet PDF File C3112 PDF File

C3112
C3112

Overview
2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications • • • High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 400 125 −55~125 Unit V V V mA mA mW °C °C JEDEC TO-92 JEITA SC-43 Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-5F1B temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the Weight: 0.
21 g (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob NF (1) Noise figure NF (2) Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.
1 mA, f = 100 Hz, RG = 10 kΩ VCE = 6 V, IC = 0.
1 mA, f = 1 kHz, RG = 10 kΩ Min ⎯ ⎯ 600 ⎯ 100 ⎯ ⎯ ⎯ Typ.
⎯ ⎯ ⎯ 0.
12 250 3.
5 0.
5 0.
3 Max 0.
1 0.
1 3600 0.
25 ⎯ ⎯ ⎯ dB ⎯ V MHz pF Unit μA μA Note: hFE classification A: 600~1800, B: 1200~3600 1 2007-11-01 Free Datasheet http://www.
datasheet4u.
com/ 2SC311...


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