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P1003EVG

UNIKC
Part Number P1003EVG
Manufacturer UNIKC
Description P-Channel Enhancement Mode MOSFET
Published Aug 15, 2013
Detailed Description P1003EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS -30V RDS(ON) 10.5mΩ @VGS = -10V ID -13A SOP- 08 AB...
Datasheet PDF File P1003EVG PDF File

P1003EVG
P1003EVG

Overview
P1003EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS -30V RDS(ON) 10.
5mΩ @VGS = -10V ID -13A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation 1 SYMBOL VDS VGS LIMITS -30 ±25 -13 -9 -50 -49 120 2.
5 1.
6 -55 to 150 UNITS V TA = 25 ° C TA = 70 ° C ID IDM IAS A L = 0.
1mH TA = 25 ° C TA = 70 ° C EAS PD TJ, TSTG mJ W ° C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 SYMBOL RqJC RqJA TYPICAL MAXIMUM 25 50 UNITS ° C/W Pulse width limited by maximum junction temperature.
Ver 1.
0 1 2012/4/16 Free Datasheet http://www.
datasheet4u.
com/ P1003EVG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Sourc...


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