DatasheetsPDF.com

MC4801

FreesCale
Part Number MC4801
Manufacturer FreesCale
Description P-Channel MOSFET
Published Aug 19, 2013
Detailed Description Freescale P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process t...
Datasheet PDF File MC4801 PDF File

MC4801
MC4801


Overview
Freescale P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology AO4801/MC4801 PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 52 @ VGS = -4.
5V -20 89 @ VGS = -2.
5V 124 @ Vgs = -1.
8V 1 2 3 4 ID (A) -4.
9 -4.
0 -3.
6 8 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS -20 Drain-Source Voltage V VGS ±12 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b a a o T A=25 C T A=70 C o o ID IDM IS -5.
2 -4.
1 ±50 -2.
1 2.
1 1.
3 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a T A=25 C T A=70 C o o PD Operating Junction and Storage Temperature Range T J, T stg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Case a Maximum Junction-to-Ambient a Symbol RθJC RθJA Maximum 40 60 Units o o t <= 5 sec t <= 5 sec C/W C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature 1 www.
freescale.
net.
cn Free Datasheet http://www.
datasheet4u.
com/ Freescale AO4801/MC4801 SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf VDS = VGS, ID = -250 uA VDS = 0 V, VGS = ±12 V o Symbol Test Conditions Min -0.
7 Limits Unit Typ Max ±100 o nA uA A VDS = -16 V, VGS = 0 V VDS =...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)