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STC4516

Stanson
Part Number STC4516
Manufacturer Stanson
Description Complementary Dual Enhancement Mode MOSFET
Published Aug 29, 2013
Detailed Description Complementary Dual Enhancement Mode MOSFET STC4516 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the ...
Datasheet PDF File STC4516 PDF File

STC4516
STC4516


Overview
Complementary Dual Enhancement Mode MOSFET STC4516 8.
5A for N Channel / -7.
2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION SOP-8 Top View FEATURE P Channel z -30V/-7.
2A, RDS(ON) = 22m-ohm (Typ.
) @VGS =-10V z -30V/-5.
6A, RDS(ON) = 40m-ohm @VGS =-4.
5V N Channel z 30V/8.
5A, RDS(ON) = 10m-ohm @VGS =10V z 30V/7.
8A, RDS(ON) = 16m-ohm @VGS =4.
5V z Super high density cell design for extremely low RDS(ON) z SOP-8 package design 8 D1 7 D1 6 D2 5 D2 STC5416 YA 1 S1 2 G1 3 S2 4 G2 N-Channel ...



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