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BTP8550N3

Cystech Electonics
Part Number BTP8550N3
Manufacturer Cystech Electonics
Description PNP Transistor
Published Aug 30, 2013
Detailed Description CYStech Electronics Corp. Low VCESAT PNP Epitaxial Planar Transistor BTP8550N3 Spec. No. : C313N3-H Issued Date : 2003....
Datasheet PDF File BTP8550N3 PDF File

BTP8550N3
BTP8550N3

Overview
CYStech Electronics Corp.
Low VCESAT PNP Epitaxial Planar Transistor BTP8550N3 Spec.
No.
: C313N3-H Issued Date : 2003.
09.
26 Revised Date :2014.
01.
28 Page No.
: 1/8 Features • Low VCE(SAT), -0.
21V(typically) at IC=-500mA/IB=-50mA.
• Complementary to BTN8050N3.
• Pb-free lead plating and halogen-free package Symbol BTP8550N3 Outline SOT-23 B：Base C：Collector E：Emitter Ordering Information Device BTP8550N3-X-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTP8550N3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C313N3-H Issued Date : 2003.
09.
26 Revised Date :2014.
01.
28 Page No.
: 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg Limits -40 -25 -6 -1.
5 -3 (Note) 225 556 -55~+150 -55~+150 Unit V V V A A mW °C/W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 VBE(ON) *hFE 1 *hFE 2 fT Cob Min.
-40 -25 -6 120 80 - Typ.
-0.
21 270 12 Max.
-100 -100 -0.
3 -0.
4 -0.
5 -1 560 - Unit V V V nA nA V V V V MHz pF Test Conditions IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-35V, IE=0 VEB=-6V, IC=0 IC=-400mA, IB=-20mA IC=-500mA, IB=-50mA IC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCE=-3V, IC=-100mA VCE=-3V, IC=-800mA VCE=-5V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 1 Rank Range C 120~270 D 180~390 E 270~560 BTP8550N3 CYStek Product Specification CYStech Electronics Corp.
Typical ...


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