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TH58NVG5S0FTA20

Toshiba Semiconductor
Part Number TH58NVG5S0FTA20
Manufacturer Toshiba Semiconductor
Description 32-GBIT (4G x 8 BIT) CMOS NAND E2PROM
Published Sep 4, 2013
Detailed Description TH58NVG5S0FTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 GBIT (4G × 8 BIT) CMOS NAND E2PROM DESCRIPT...
Datasheet PDF File TH58NVG5S0FTA20 PDF File

TH58NVG5S0FTA20
TH58NVG5S0FTA20

Overview
TH58NVG5S0FTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 GBIT (4G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG5S0F is a single 3.
3V 32 Gbit (36,305,895,424 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 16384 blocks.
The device has two 4328-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4328-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 14.
5 Kbytes: 4328 bytes × 64 pages).
The TH58NVG5S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
FEATURES • Organization x8 Memory cell array 4328 × 256K × 8 × 4 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.
5K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read • Mode control Serial input/output Command control • Number of valid blocks Min 16064 blocks Max 16384 blocks • Power supply VCC = 2.
7V to 3.
6V • Access time Cell array to register 30 µs max Serial Read Cycle 25 ns min (CL=100pF) • Program/Erase time Auto Page Program Auto Block Erase 300 µs/page typ.
3 ms/block typ.
• Operating current Read (25 ns cycle) Program (avg.
) Erase (avg.
) Standby 30 mA max.
30 mA max 30 mA max 200 µA max • Package TSOP I 48-P-1220-0.
50C • 4bit ECC for each 512Byte is required.
1 2011-07-01C PIN ASSIGNMENT (TOP VIEW) PINNAMES ×8 NC NC NC NC NC RY / BY 2 RY / BY 1 RE CE 1 CE 2 NC VCC VSS NC NC CLE ALE WE WP NC NC NC NC NC 1 2 3 4 ...


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