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IRF7465PBF

International Rectifier
Part Number IRF7465PBF
Manufacturer International Rectifier
Description High frequency DC-DC converters
Published Sep 4, 2013
Detailed Description PD-95274 SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l IRF7465PbF HEXFET® Power MOSFET RDS(on...
Datasheet PDF File IRF7465PBF PDF File

IRF7465PBF
IRF7465PBF

Overview
PD-95274 SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l IRF7465PbF HEXFET® Power MOSFET RDS(on) max 0.
28W@VGS = 10V ID 1.
9A VDSS 150V Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
1.
9 1.
5 15 2.
5 0.
02 ± 30 7.
8 -55 to + 150 300 (1.
6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ.
––– ––– Max.
20 50 Units °C/W Notes  through † are on page 8 www.
irf.
com 1 09/21/04 Free Datasheet http://www.
datasheet4u.
com/ IRF7465PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
150 ––– ––– 3.
0 ––– ––– ––– ––– Typ.
––– 0.
19 ––– ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA ƒ 0.
28 Ω VGS = 10V, ID = 1.
14A ƒ 5.
5 V VDS = VGS, ID = 250µA 25 VDS = 150V, VGS = 0V µA 250 VDS = 120V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Ch...


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