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KI5908DC

Kexin
Part Number KI5908DC
Manufacturer Kexin
Description Dual N-Channel MOSFET
Published Sep 5, 2013
Detailed Description SMD Type Dual N-Channel 20-V (D-S) MOSFET KI5908DC IC IC Features TrenchFET Power MOSFETS Ultra Low rDS(on) and Excell...
Datasheet PDF File KI5908DC PDF File

KI5908DC
KI5908DC

Overview
SMD Type Dual N-Channel 20-V (D-S) MOSFET KI5908DC IC IC Features TrenchFET Power MOSFETS Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 ) TA = 25 TA = 85 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation * TA = 25 TA = 85 Operating Junction and Storage Temperature Range Soldering Recommendations *Surface Mounted on 1" X 1" FR4 Board.
TJ, Tstg IDM IS PD 1.
8 2.
1 1.
1 -55 to 150 260 0.
9 1.
1 0.
6 W Symbol VDS VGS ID 5.
9 4.
2 5secs 20 8 4.
4 3.
1 A Steady State Unit V Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1" FR4 Board.
t 5 sec Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 /W Unit Steady-State Steady-State www.
kexin.
com.
cn 1 Free Datasheet http://www.
datasheet4u.
com/ SMD Type KI5908DC Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Symbol VGS(th) IGSS IDSS ID(on) Testconditons VDS = VGS, ID = 250 VDS = 0 V, VGS = A 8V Min 0.
4 Typ Max 1.
0 100 1 IC IC Unit V nA A VDS = 20V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 VDS 5 V, VGS = 4.
5 V 20 0.
032 0.
036 0.
042 22 0.
8 5 VDS = 10 V, VGS = 4.
5V, ID = 4.
4 A 0.
85 1 1.
9 20 VDD=10V,RL=10 ,ID=1A,VGEN=10V,RG=6 36 30 12 IF = 0.
9 A, di/dt = 100 A/ s 45 5 A 0.
04 0.
045 0.
052 S 1.
2 7.
5 nC V VGS = 4.
5 V, ID = 4.
4 A Drain Source On State Resistance* rDS(on) VGS = 2.
5V, ID = 4.
1A VGS = 2.
5V, ID =1.
9A Forward Transconductanceb Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test :Pulse width gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr VDS = 10V, ID = 4.
4 A IS = 0.
9 A, VGS = 0 V 30 55 45 20 90 ns ns 300 s,duty cy...


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