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FDMC8622

Fairchild Semiconductor
Part Number FDMC8622
Manufacturer Fairchild Semiconductor
Description N-Channel Power Trench MOSFET
Published Sep 9, 2013
Detailed Description FDMC8622 N-Channel Power Trench® MOSFET September 2012 FDMC8622 N-Channel Power Trench® MOSFET 100 V, 16 A, 56 m: Feat...
Datasheet PDF File FDMC8622 PDF File

FDMC8622
FDMC8622

Overview
FDMC8622 N-Channel Power Trench® MOSFET September 2012 FDMC8622 N-Channel Power Trench® MOSFET 100 V, 16 A, 56 m: Features „ Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A „ Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Application „ DC-DC Primary Switch D D D D D D D G 5 6 7 8 4 3 2 1 G S S S D S S S MLP 3.
3X3.
3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy...


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