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RJK03A4DPA

Renesas
Part Number RJK03A4DPA
Manufacturer Renesas
Description Silicon N Channel Power MOS FET
Published Sep 9, 2013
Detailed Description Preliminary RJK03A4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1828-0200 Power Switching Rev....
Datasheet PDF File RJK03A4DPA PDF File

RJK03A4DPA
RJK03A4DPA


Overview
Preliminary RJK03A4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1828-0200 Power Switching Rev.
2.
00 Sep 29, 2009 Features High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.
9 mΩ typ.
(at VGS = 10 V) • Pb-free • Halogen-free • • • • • Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation...



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