DatasheetsPDF.com

RJK03C1DPB

Renesas
Part Number RJK03C1DPB
Manufacturer Renesas
Description Silicon N Channel Power MOS FET
Published Sep 9, 2013
Detailed Description Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev....
Datasheet PDF File RJK03C1DPB PDF File

RJK03C1DPB
RJK03C1DPB

Overview
Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.
3.
10 Sep 29, 2009 Features High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.
7 mΩ typ.
(at VGS = 10 V) • Pb-free • Halogen-free • • • • • Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 6 7 8 D D D D 5 4 4 G 3 12 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)