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AUIRFU4615

International Rectifier
Part Number AUIRFU4615
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 9, 2013
Detailed Description AUTOMOTIVE GRADE PD -96398A Features Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l F...
Datasheet PDF File AUIRFU4615 PDF File

AUIRFU4615
AUIRFU4615

Overview
AUTOMOTIVE GRADE PD -96398A Features Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * l AUIRFR4615 AUIRFU4615 D HEXFET® Power MOSFET G S VDSS RDS(on) typ.
max.
ID D D 150V 34m: 42m: 33A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
G S G G D S DPak AUIRFR4615 D IPAK AUIRFU4615 S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS (Thermally limited) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Max.
33 24 140 144 0.
96 ± 20 109 See Fig.
14, 15, 22a, 22b, 38 -55 to + 175 300(1.
6mm from case) Units A W W/°C V mJ A mJ V/ns °C c c d Peak Diode Recovery Operating Junction ...


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