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AUIRFSL3107

International Rectifier
Part Number AUIRFSL3107
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 9, 2013
Detailed Description AUTOMOTIVE GRADE PD - 96394A Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Enhanced dV...
Datasheet PDF File AUIRFSL3107 PDF File

AUIRFSL3107
AUIRFSL3107

Overview
AUTOMOTIVE GRADE PD - 96394A Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRFS3107 AUIRFSL3107 D HEXFET® Power MOSFET G S D VDSS RDS(on) typ.
max.
ID (Silicon Limited) ID (Package Limited) D 75V 2.
5m: 3.
0m: 230A 195A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
S G G D S D2 Pak AUIRFS3107 TO-262 AUIRFSL3107 G D S Absolute Maximum Ratings Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current...


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