DatasheetsPDF.com

AUIRLZ44Z

International Rectifier
Part Number AUIRLZ44Z
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 9, 2013
Detailed Description PD - 97682 AUTOMOTIVE GRADE Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operati...
Datasheet PDF File AUIRLZ44Z PDF File

AUIRLZ44Z
AUIRLZ44Z

Overview
PD - 97682 AUTOMOTIVE GRADE Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRLZ44Z G S V(BR)DSS 55V RDS(on) typ.
11mΩ max.
13.
5mΩ ID 51A D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
G D S TO-220AB AUIRLZ44Z G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS(Thermally Limited) EAS (tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max.
51 36 204 80 0.
53 ± 16 78 110 See Fig.
12a, 12b, 15, 16 -55 to + 175 Units A W W/°C V mJ A mJ °C ™ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy d Ù h g Operating Junction and Storage Temper...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)