DatasheetsPDF.com

K4005-01MR

Fuji Electric
Part Number K4005-01MR
Manufacturer Fuji Electric
Description Power MOSFET
Published Sep 15, 2013
Detailed Description This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be ...
Datasheet PDF File K4005-01MR PDF File

K4005-01MR
K4005-01MR


Overview
This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.
,Ltd.
They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.
,Ltd.
DRAWN DATE Jan.
-31-'05 CHECKED Jan.
-31-'05 Jan.
-31-'05 Date Spec.
No.
Device Name Type Name : : : : NAME APPROVED SPECIFICATION Jan.
-31-2005 2SK4005-01MR Power MOSFET MS5F5984 DWG.
NO.
MS5F5984 1 / 18 Fuji Electric Device Technology Co.
,Ltd.
H04-004-05 Free Datasheet http://www.
datasheet4u.
com/ This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.
,Ltd.
They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.
,Ltd.
2005 enactment Date Jan.
-31 Classification Index Revised Records DWG.
NO.
Fuji Electric Device Technology Co.
,Ltd.
Content MS5F5984 Drawn Checked Checked Approved 2 / 18 Free Datasheet http://www.
datasheet4u.
com/ H04-004-03 1.
Scope 2.
Construction 3.
Applications 4.
Outview This specifies Fuji Power MOSFET 2SK4005-01MR N-Channel enhancement mode power MOSFET for Switching TO-220F Outview See to 8/18 page 5.
Absolute Maximum Ratings at Tc=25 C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID IDP VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg VISO Characteristics 900 900 6.
0 ± 24.
0 ± 30 6.
0 487 7.
0 40 5 70 W 2.
16 150 -55 t...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)