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SNN01Z60Q

KODENSHI KOREA
Part Number SNN01Z60Q
Manufacturer KODENSHI KOREA
Description Logic Level gat Drive Application
Published Sep 17, 2013
Detailed Description SN NN01Z Z60Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic lev...
Datasheet PDF File SNN01Z60Q PDF File

SNN01Z60Q
SNN01Z60Q

Overview
SN NN01Z Z60Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic level l gate drive e • Max.
RDS(ON a VGS = 10V V, ID = 0.
5A N) = 135mΩ at • Low RDS(on) provides hi igher efficie ency • ESD protec cted: 1000V V (HBM ±500 0V) • Halogen fr ree and RoH HS complian nt device D G Package SOT-223 Or rdering In nformatio on Part Num mber SNN01Z Z60Q Marking g SNN01Z6 60 D S SOT-223 arking Inf formation n Ma Column 1: 1 Device Cod de Column 2: 2 Production n Information e.
g.
) YW WW -.
Y: Year Y Code -.
WW W: Week Code e SNN0 01Z60 YWW bsolute maximum m ratings (T TC=25°C unles ss otherwise noted) n Ab Characteristic Drain-source voltage v G Gate-source v voltage Drain current (DC) * Drain current (Pulsed) * (Note 2) Symb bol VDS SS VGS SS ID Tc=25°C Tc=100°C IDM M EAS S IAR R EAR R PD TJ Tst tg Rati ing 60 0 ±2 20 1 0.
6 63 4 35 5 1 0.
1 18 1.
8 15 50 -55~150 Unit V V A A A mJ A mJ W °C °C Si ingle pulsed avalanche energy e Re epetit...


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