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UPA2816T1S

Renesas
Part Number UPA2816T1S
Manufacturer Renesas
Description P-channel MOSFEF
Published Sep 17, 2013
Detailed Description Data Sheet μPA2816T1S P-channel MOSFET –30 V, –17 A, 15.5 mΩ Description The μPA2816T1S is P-channel MOS Field Effect T...
Datasheet PDF File UPA2816T1S PDF File

UPA2816T1S
UPA2816T1S


Overview
Data Sheet μPA2816T1S P-channel MOSFET –30 V, –17 A, 15.
5 mΩ Description The μPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
R07DS0778EJ0101 Rev.
1.
01 May 28, 2013 Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 15.
5 mΩ MAX.
(VGS = −10 V, ID = −17 A) • 4.
5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free HWSON-8 Ordering Information Part No.
LEAD PLATING Pure Sn PACKING Tape 5000 p/reel HWSON-8 typ.
0.
022 g Package μPA2816T1S-E2-AT ∗1 Note: ∗ 1.
Pb-free (This product does not contain Pb in external electrode and other parts.
) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS Ratings −30 −25 / +20 m17 m68 1.
5 3.
8 12 150 −55 to +150 17 28.
9 Unit V V A A W W W °C °C A mJ Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Channel to Case (Drain) Thermal Resistance Rth(ch-A) Rth(ch-C) 83.
3 10.
4 °C/W °C/W Notes: ∗1.
PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2.
Mounted on a glass epoxy board of 25.
4 mm x 25.
4 mm x 0.
8 mmt ∗ 3.
Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH R07DS0778EJ0101 Rev.
1.
01 May 28, 2013 Page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ μPA2816T1S Chapter Title Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state 1 Resistance ∗ Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time F...


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