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SQ2308ES

VISHAY
Part Number SQ2308ES
Manufacturer VISHAY
Description Automotive N-Channel MOSFET
Published Sep 18, 2013
Detailed Description SQ2308ES Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 1...
Datasheet PDF File SQ2308ES PDF File

SQ2308ES
SQ2308ES

Overview
SQ2308ES Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.
5 V ID (A) Configuration TO-236 (SOT-23) 60 0.
155 0.
205 2.
3 Single D FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc • Find out more about Vishay’s Automotive Grade Product Requirements at: www.
vishay.
com/applications G1 S2 3D G Top View SQ2308ES (8J)* * Marking Code ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free S N-Channel MOSFET SOT-23 SQ2308ES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 60 ± 20 2.
3 1.
4 2.
5 9 11 6 2 0.
6 - 55 to + 175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a.
Pulse test; pulse width  300 μs, duty cycle  2 %.
b.
When mounted on 1" square PCB (FR-4 material).
c.
Parametric verification ongoing.
PCB Mountb SYMBOL RthJA RthJF LIMIT 175 75 UNIT °C/W Document Number: 65353 S10-2109-Rev.
B, 27-Sep-10 www.
vishay.
com 1 SQ2308ES Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb Dynamicb VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V VDS = 60 V VGS = ...


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