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KML0D6NP20EA

KEC
Part Number KML0D6NP20EA
Manufacturer KEC
Description N and P-Ch Trench MOSFET
Published Sep 21, 2013
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description It’s Mainly Suitable for Load Switching Cell Phones, Battery Powered Sy...
Datasheet PDF File KML0D6NP20EA PDF File

KML0D6NP20EA
KML0D6NP20EA


Overview
SEMICONDUCTOR TECHNICAL DATA General Description It’s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter.
KML0D6NP20EA N and P-Ch Trench MOSFET B B1 A1 A FEATURES N-Channel : VDSS=20V, ID=600mA (RDS(ON)=0.
70 : VDSS=20V, ID=500mA (RDS(ON)=0.
85 : VDSS=20V, ID=350mA (RDS(ON)=1.
25 P-Channel : VDSS=-20V, ID=-400mA (RDS(ON)=1.
2 : VDSS=-20V, ID=-300mA (RDS(ON)=1.
6 : VDSS=-20V, ID=-150mA (RDS(ON)=2.
7 @ VGS=-4.
5V).
@ VGS=-2.
5V).
@ VGS=-1.
8V).
@ VGS=4.
5V).
@ VGS=2.
5V).
@ VGS=1.
8V).
C 1 6 2 C 5 D 3 4 P P DIM A A1 B B1 C D H J P MILLIMETERS _ 0.
05 1.
6 + _ 0.
05 1.
0 + _ 0.
05 1.
6 + _ 0.
05 1.
2 + 0.
50 _ 0.
05 0.
2 + _ 0.
05 0.
5 + _ 0.
05 0.
12 + 5 H 1.
Source 1 2.
Gate 1 3.
Drain 2 4.
Source 2 5.
Gate 2 6.
Drain 1 TES6 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC @TA=25 Drain Current DC @TA=85 Pulsed Source-Drain Diode Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range ) SYMBO...



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