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KTJ6131E

KEC
Part Number KTJ6131E
Manufacturer KEC
Description P CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Sep 21, 2013
Detailed Description SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive....
Datasheet PDF File KTJ6131E PDF File

KTJ6131E
KTJ6131E

Overview
SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.
5 Gate Drive.
Low Threshold Voltage : Vth=-0.
5 High Speed.
Small Package.
Enhancement-Mode.
KTJ6131E P CHANNEL MOS FIELD EFFECT TRANSISTOR E B -1.
5V.
A G H 2 1 3 D DIM A B C D E G H J MILLIMETERS _ 0.
10 1.
60 + _ 0.
10 0.
85 + _ 0.
10 0.
70 + 0.
27+0.
10/-0.
05 _ 0.
10 1.
60 + _ 0.
10 1.
00 + 0.
50 _ 0.
05 0.
13 + MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range ) SYMBOL VDS VGSS ID PD Tch Tstg RATING -30 20 -50 100 150 -55 150 UNIT V V mA mW 1.
SOURCE 2.
GATE 3.
DRAIN C J ESM EQUIVALENT CIRCUIT D Marking Type Name G EB S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Adm...


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