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KU024N06P

KEC
Part Number KU024N06P
Manufacturer KEC
Description N-ch Trench MOS FET
Published Sep 21, 2013
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching t...
Datasheet PDF File KU024N06P PDF File

KU024N06P
KU024N06P

Overview
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 60V, ID= 200A Drain-Source ON Resistance : RDS(ON)=2.
4m (Max.
) @VGS = 10V KU024N06P N-ch Trench MOS FET K MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 ) SYMBOL VDSS VGSS ID 126 IDP EAS EAR dv/dt PD 504* 1,500 20 4.
5 192 1.
54 Tj Tstg 150 -55 ~ 150 mJ mJ V/ns W W/ A RATING 60 20 200* UNIT V V Derate above 25 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistan...


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