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AP6677GH

Advanced Power Electronics
Part Number AP6677GH
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2013
Detailed Description AP6677GH RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fas...
Datasheet PDF File AP6677GH PDF File

AP6677GH
AP6677GH

Overview
AP6677GH RoHS-compliant Product Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -40V 12.
3mΩ -60A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -40 +20 -60 -38 -240 69 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.
8 62.
5 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200901221 Free Datasheet http://www.
datasheet4u.
com/ AP6677GH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-30A VGS=-4.
5V, ID=-20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Min.
-40 -1 - Typ.
46 44 6 28 11 60 60 120 560 380 Max.
Units 12.
3 18 -3 -25 +100 70 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS=-10V, ID=-30A VDS=-32V, VGS=0V VGS= +20V, VDS=0V ID=-30A VDS=-32V VGS=-4.
5V VDS=-20V ID=-30A RG=3.
3Ω,VGS=-10V RD=0.
67Ω VGS=0V VDS=-25V f=1.
0MH...


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