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AP6680GM

Advanced Power Electronics
Part Number AP6680GM
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2013
Detailed Description AP6680GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ High Vgs Max Rating Voltage ▼ S...
Datasheet PDF File AP6680GM PDF File

AP6680GM
AP6680GM

Overview
AP6680GM Pb Free Plating Product Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ High Vgs Max Rating Voltage ▼ Surface Mount Package D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 30V 11mΩ 11.
5A ID SO-8 S S S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ± 25 11.
5 9.
5 50 2.
5 0.
02 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max.
50 Unit ℃/W Data and specifications subject to change without ...


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