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IXTP4N80P

IXYS
Part Number IXTP4N80P
Manufacturer IXYS
Description Power MOSFET
Published Sep 28, 2013
Detailed Description Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N80P IXTP4N80P V...
Datasheet PDF File IXTP4N80P PDF File

IXTP4N80P
IXTP4N80P

Overview
Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N80P IXTP4N80P VDSS = 800 = 3.
6 ID25 RDS(on) ≤ 3.
4 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C Maximum Ratings 800 V 800 V ± 30 ± 40 3.
6 8 2 20 250 10 100 -55 .
.
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+150 150 -55 .
.
.
+150 V V A A A mJ mJ V/ns W °C °C °C TO-263 (IXTA) G S (TAB) TO-220 (IXTP) G D S (TAB) G = Gate S = Source D = Drain...


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