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STC5551F

KODENSHI KOREA
Part Number STC5551F
Manufacturer KODENSHI KOREA
Description NPN Silicon Transistor
Published Oct 3, 2013
Detailed Description STC5551F NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application PIN Connection Fe...
Datasheet PDF File STC5551F PDF File

STC5551F
STC5551F

Overview
STC5551F NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application PIN Connection Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.
5V(MAX.
) SOT-89 Ordering Information Type No.
STC5551F N51: DEVICE CODE, Marking N51 □YWW □ : hFE rank, YWW(Y Package Code SOT-89 : Year code, WW : Weekly code) Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current (Ta=25°C) Symbol VCBO VCEO VEBO IC ICP* PC PC** TJ Tstg Ratings 180 160 6 0.
6 1.
2 0.
5 1 150 -55~150 Unit V V V A(DC) A(Pulse) W °C °C Collector power dissipation Junction temperature Storage temperature * : Single pulse, tp= 300 ㎲ ** : When mounted on ceramic substrate(250 ㎟×0.
8t) KSD-T5B012-003 1 Free Datasheet http://www.
datasheet4u.
com/ STC5551F Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltag...


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