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FQU5N60C

Fairchild Semiconductor
Part Number FQU5N60C
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Oct 6, 2013
Detailed Description FQD5N60C / FQU5N60C N-Channel MOSFET March 2013 N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ω Description FQD5N60C / FQU5...
Datasheet PDF File FQU5N60C PDF File

FQU5N60C
FQU5N60C

Overview
FQD5N60C / FQU5N60C N-Channel MOSFET March 2013 N-Channel QFET MOSFET 600 V, 2.
8 A, 2.
5 Ω Description FQD5N60C / FQU5N60C Features • 2.
8 A, 600 V, RDS(on) = 2.
5 Ω (Max) @VGS = 10 V, ID = 1.
4 A • Low Gate Charge (Typ.
15 nC) • Low Crss (Typ.
6.
5 pF) • 100% Avalanche Tested • RoHS compliant This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D ◀ ! ● D G S D-PAK FQD Series G D S I-PAK G! ▲ ● ● FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD5N60C / FQU5N60C 600 2.
8 1.
8 11.
2 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 210 2.
8 4.
9 4.
5 2.
5 49 0.
39 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Typ Max 2.
56 50 110 Unit °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Fairchild Semiconductor Corporation FQD5N60C / FQU5N60C Rev.
C0 www.
fairchildsemi.
com Free Datasheet http://www.
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com/ FQD5N60C / FQU5N60C N-Channel...


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