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UPA863TD

CEL
Part Number UPA863TD
Manufacturer CEL
Description NPN SILICON RF TRANSISTOR
Published Oct 6, 2013
Detailed Description DATA SHEET NPN SILICON RF TWIN TRANSISTOR μPA863TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN L...
Datasheet PDF File UPA863TD PDF File

UPA863TD
UPA863TD

Overview
DATA SHEET NPN SILICON RF TWIN TRANSISTOR μPA863TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor fT = 12.
0 GHz TYP.
, ⏐S21e⏐2 = 9.
0 dB TYP.
@ VCE = 1 V, IC = 10 mA, f = 2 GHz fT = 4.
5 GHz TYP.
, ⏐S21e⏐2 = 4.
0 dB TYP.
@ VCE = 1 V, IC = 5 mA, f = 2 GHz • Low voltage operation Q2: Built-in low phase distortion transistor suited for OSC operation • 6-pin lead-less minimold package BUILT-IN TRANSISTORS Q1 3-pin thin-type ultra super minimold part No.
2SC5436 Q2 2SC5800 ORDERING INFORMATION Part Number Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape μPA863TD-A μPA863TD-T3-A Remark To order evaluation samples, consult your nearby sales office.
Unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessi...


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