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ICE13N65FP

Icemos
Part Number ICE13N65FP
Manufacturer Icemos
Description N-Channel Enhancement Mode MOSFET
Published Oct 8, 2013
Detailed Description Preliminary Data Sheet ICE13N65FP ICE13N65FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate ...
Datasheet PDF File ICE13N65FP PDF File

ICE13N65FP
ICE13N65FP

Overview
Preliminary Data Sheet ICE13N65FP ICE13N65FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 13A 650V 0.
25Ω 59nC Max Min Typ Typ Qg G S ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK Isolated (T0-220) Maximum ratings b Parameter , at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=6.
5A 13 39 460 A A mJ Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque a When mounted on 1inch square 2oz copper clad FR-4 I AR dv/dt limited by Tjmax VDS=480V, ID=13A, Tj=125oC Static AC (f>1Hz) Tc=25oC 6.
5 50 ±20 ±30 35 -55 to +150 A V/ns VGS Ptot Tj, Tstg V W o C M 2.
5 screws 50 Ncm b Preliminary Data Sheet – Specifications subject to change SP-13N65FP-000-2a 06/05/2013 Free Datasheet http://www.
datasheet4u.
com/ 1 Preliminary Data Sheet ICE13N65FP Parameter Thermal characteristics Thermal resistance, junctioncase a Thermal resistance, junctionambient a Soldering temperature, wave soldering only allowed at leads RthJC RthJA T sold leaded 1.
6mm (0.
063in.
) from case for 10 s 3.
5 o Symbol Conditions Values Min Typ Max Unit C/W 80 260 o C Electrical characteristics b , at T =25oC, unless otherwise specified j Static characteristics Drain-source breakdown voltage V(BR)DSS VGS(th) Gate threshold vol...


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