DatasheetsPDF.com

ICE47N65W

Icemos
Part Number ICE47N65W
Manufacturer Icemos
Description N-Channel Enhancement Mode MOSFET
Published Oct 8, 2013
Detailed Description Preliminary Data Sheet ICE47N65W ICE47N65W N-Channel Enhancement Mode MOSFET Features • TO247 package • Low rDS(on) • U...
Datasheet PDF File ICE47N65W PDF File

ICE47N65W
ICE47N65W


Overview
Preliminary Data Sheet ICE47N65W ICE47N65W N-Channel Enhancement Mode MOSFET Features • TO247 package • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=1mA VGS=10V VDS=480V D 47A 650V 0.
063Ω 187nC Max Min Typ Typ Qg G S ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
TO247 1:G, 2:D, 3:S, 4:D, (TO-247) Maximum ratings b Parameter , at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=24A 47 117 1600 A A mJ Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque a When mounted on 1inch square 2oz copper clad FR-4 I AR dv/dt limited by Tjmax VDS=480V, ID=47A, Tj=125oC Static AC (f>1Hz) Tc=25oC 24 50 ±20 ±30 417 -55 to +150 A V/ns VGS Ptot Tj, Tstg V W o C M 3 & 3.
5 screws 60 Ncm b Preliminary Data Sheet – Specifications subject to change SP-47N65W-000-3a 06/05/2013 Free Datasheet http://www.
datasheet4u.
com/ 1 Preliminary Data Sheet ICE47N65W Parameter Thermal characteristics Thermal resistance, junctioncase a Thermal resistance, junctionambient a Soldering temperature, wave soldering only allowed at leads RthJC RthJA T sold leaded 1.
6mm (0.
063in.
) from case for 10 s 0.
3 o Symbol Conditions Values Min Typ Max Unit C/W 62 260 o C Electrical characteristics b , at T =25oC, unless otherwise specified j Static characteristics Drain-source breakdown voltage V(BR)DSS VGS(th)...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)