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ICE60N130FP

Icemos
Part Number ICE60N130FP
Manufacturer Icemos
Description N-Channel Enhancement Mode MOSFET
Published Oct 8, 2013
Detailed Description Preliminary Data Sheet ICE60N130FP ICE60N130FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gat...
Datasheet PDF File ICE60N130FP PDF File

ICE60N130FP
ICE60N130FP

Overview
Preliminary Data Sheet ICE60N130FP ICE60N130FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Optimized design for hard switching SMPS topologies HALOGEN Product Summary ID rDS(on) FREE TA=25oC 23A Max Min Typ Typ BVDSS @Tjmax ID=250uA 650V VGS=10V 0.
13Ω VDS=480V 82nC D Qg G S ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK Isolated (T0-220) 1=Gate, 2=Drain, 3=Source Maximum ratings b Parameter , at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=11.
5A 23 82 690 A A mJ Avalanche cur...


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