DatasheetsPDF.com

ICE60N150FP

Icemos
Part Number ICE60N150FP
Manufacturer Icemos
Description N-Channel Enhancement Mode MOSFET
Published Oct 8, 2013
Detailed Description Preliminary Data Sheet ICE60N150FP ICE60N150FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gat...
Datasheet PDF File ICE60N150FP PDF File

ICE60N150FP
ICE60N150FP

Overview
Preliminary Data Sheet ICE60N150FP ICE60N150FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Optimized design for hard switching SMPS topologies HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 25A 650V 0.
13Ω 85nC Max Min Typ Typ Qg G S ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK Isolate...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)