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ICE60N600D

Icemos
Part Number ICE60N600D
Manufacturer Icemos
Description N-Channel Enhancement Mode MOSFET
Published Oct 8, 2013
Detailed Description Preliminary Data Sheet ICE60N600D ICE60N600D N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate ...
Datasheet PDF File ICE60N600D PDF File

ICE60N600D
ICE60N600D

Overview
Preliminary Data Sheet ICE60N600D ICE60N600D N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 7A 600V 0.
52Ω 21nC Max Min Typ Typ Qg G S T0252 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source.
Maximum ratings b Parameter , at Tj=25°C, unless otherwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25°C Tc=25°C ID=3.
5A 7 2...


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