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2SC6026CT

Toshiba
Part Number 2SC6026CT
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Oct 15, 2013
Detailed Description 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications ...
Datasheet PDF File 2SC6026CT PDF File

2SC6026CT
2SC6026CT

Overview
2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications  High voltage and high current : VCEO = 50V, IC = 100mA (max)  Excellent hFE linearity : hFE (IC = 0.
1 mA)/hFE (IC = 2 mA)= 0.
95 (typ.
)  High hFE : hFE = 120 to 400  Complementary to 2SA2154CT Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current Collector power dissipation IB 30 mA PC (Note1) 100 mW CST3 1.
BASE 2.
EMITTER 3.
COLLECTOR Junction temperature Storage temper...


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