DatasheetsPDF.com

AJAV-5508

AVAGO
Part Number AJAV-5508
Manufacturer AVAGO
Description Power Amplifier
Published Oct 23, 2013
Detailed Description AJAV-5508 W-CDMA/HSPA Band VIII Power Amplifier Data Sheet Description The AJAV-5508 is a complete, high-performance p...
Datasheet PDF File AJAV-5508 PDF File

AJAV-5508
AJAV-5508

Overview
AJAV-5508 W-CDMA/HSPA Band VIII Power Amplifier Data Sheet Description The AJAV-5508 is a complete, high-performance power amplifier for W-CDMA and HSPA wireless communications.
Based on a unique, patented architecture, the AJAV5508 integrates circuitry for TX filtering, RF coupling, power regulation, input and output matching and power control.
The PA is powered by a single connection to the battery and is implemented in a standard CMOS process.
Features • High-performance 3G power amplifier - UMTS Band VIII (880 - 915 MHz) - W-CDMA, HSPA, and HSPA+ Compliant • Integrated TX filtering - Delivers best noise in the industry • Integrated directional coupler • Integrated regulators and PA bias • Single direct connection to the battery VBAT RFO GND PAD CPLI GND CPLO Pin Assignments Top View (x-ray) VBAT RFI VM1 VM0 VEN US Patent # 7,728,661; 7,768,350; 7,872,528; 8,022,766 Other patents pending - No external switches or isolation inductors • MIPI control interface (optional) • High linear efficiency • Low average current • High capacity CMOS process • Small 3×3 mm DFN package Applications • Smartphones, data cards and 3G modules • Tablets, netbooks and network PCs • E-books and wireless electronic readers Functional Block Diagram Top View VBAT AJAV-5508 REGULATOR/BIAS RFI INPUT MATCH OUTPUT MATCH RFO CPLI CPLO PA CONTROL MIPI CONTROL (OPTIONAL) VM0 VM1 VEN Free Datasheet http://www.
datasheet4u.
com/ Electrical Characteristics Table 1.
Absolute Minimum and Maximum Ratings [1] Parameter Supply Voltage [2] Control Voltage [3] RF Input Power [4] Electrostatic Discharge (ESD) [5] Storage Temperature TSTG Human Body Model (HBM) Symbol VBATT VCTRL Condition VCTRL < VBATT Min.
-0.
3 -0.
3 -55 Typ.
- Max.
4.
5 4.
5 +10 3.
0 125 Unit V V dBm kV °C Notes: 1.
Permanent device damage may occur if the ratings above are exceeded.
Functional operation is not guaranteed under these conditions and should be restricted to the recommended operating cond...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)