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RLT1550-100G

Roithner
Part Number RLT1550-100G
Manufacturer Roithner
Description Infrared Laser Diode
Published Oct 23, 2013
Detailed Description RLT1550-100G TECHNICAL DATA Infrared Laser Diode Structure: GaInAsP/InP, SQW structure Lasing wavelength: typ. 1580 nm,...
Datasheet PDF File RLT1550-100G PDF File

RLT1550-100G
RLT1550-100G

Overview
RLT1550-100G TECHNICAL DATA Infrared Laser Diode Structure: GaInAsP/InP, SQW structure Lasing wavelength: typ.
1580 nm, multi mode Max.
optical power: 100 mW Package: 9 mm (SOT-148) PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Optical Output Power Po cw Threshold Current Ith cw Operation Current Iop Po = 100 mW Operation Voltage Vop Po = 100 mW Lasing Wavelength λp Po = 100 mW Spectra halfwidth ∆λ Po = 100 mW (FWHM) Beam Divergence Θ// Po = 100 mW Beam Divergence Θ Po = 100 mW Emitting area Wxd MIN 300 700 2.
3 3 8 43 - TYP 100 400 800 2.
4 1580 4 10 ...


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