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IRF6802SDPBF

Part Number	IRF6802SDPBF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Oct 23, 2013
Detailed Description	IRF6802SDPbF IRF6802SDTRPbF Typical values (unless otherwise specified) RoHs Compliant Containing No Lead and Bromide ...
Datasheet	IRF6802SDPBF PDF File

Overview

IRF6802SDPbF IRF6802SDTRPbF Typical values (unless otherwise specified) RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (<0.
7 mm) 25V max ±16V max 3.
2m@ 10V 4.
5m@ 4.
5V l Dual Sided Cooling Compatible l Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching 8.
8nC 3.
1nC 1.
1nC 22nC 13nC 1.
6V l Ideal for CPU Core DC-DC Converters l Optimized for Control FET socket of Sync.
Buck Converter l Low Conduction and Switching Losses G G D D l Compatible with existing Surface Mount Techniques S S l 100% Rg tested l PD - 97769 DirectFET®plus Power MOSFET SA Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details) SQ SX ST SA MQ MX MT MP MB DirectFET®plus ISOMETRIC Description The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.
7 mm profile.
The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6802SDTRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses.
The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF6802SDTRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters.
Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR 10 Typical RDS(on) (m) Max.
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IRF6802SDPBF Power MOSFET - International Rectifier

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