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IRF6811STRPBF

Part Number	IRF6811STRPBF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Oct 23, 2013
Detailed Description	PD-97634 l l l l l l l l l l RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible U...
Datasheet	IRF6811STRPBF PDF File

Overview

PD-97634 l l l l l l l l l l RoHS Compliant and Halogen Free Low Profile (<0.
7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques 100% Rg tested Footprint compatible to DirectFET Typical values (unless otherwise specified) DirectFET®plus Power MOSFET VGS RDS(on) Qgs2 1.
4nC IRF6811SPbF IRF6811STRPbF RDS(on) Qoss 11nC VDSS Qg tot 25V max ±16V max 2.
8mΩ @ 10V 4.
1mΩ @ 4.
5V Qgd 4.
2nC Qrr 23nC Vgs(th) 1.
6V 11nC D G S D SQ Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details) ISOMETRIC SQ SX ST MQ MX MT MP Description The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.
7 mm profile.
The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6811STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses.
The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF6811STRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters.
Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR 12 Typical RDS(on) (mΩ) Max.
Units V Drain-to-Source Voltage Gate-t...

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IRF6811STRPBF Power MOSFET - International Rectifier

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